Method for fabricating semiconductor laser device by aligning semiconductor laser chips based on light emission measurements
AssigneeSharp Kabushiki Kaisha
InventorsMasayuki Tamaishi, Hiroshi Kanishi, Yoshiyuki Itoh
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Abstract
After profiles of two chips are recognized on intermediate stages and their positions are corrected, collets are used as electrodes and a voltage is applied to the chips on bonding stage on which the chips are bonded onto a submount. Then, the respective two chips are allowed to emit light, final position correction is performed on the basis of the light-emission point data and bonding is performed. The two chips can be bonded at narrow pitches by tilting the collets with respect to chip surfaces. Consequently, two laser chips can be bonded at narrow pitches on one submount in high position accuracy.
Claims7
A method of fabricating a semiconductor laser device wherein two semiconductor laser chips 12, 13 are die-bonded on one submount 116, comprising processes of placing the semiconductor laser chips on intermediate stages 109, 110, allowing the semiconductor laser chips on the submount 116 to emit light and measuring light-emission point positions and transferring the semiconductor laser chips through fixed points to prescribed positions on the submount 116.
Dependencies are inferred from the claim text.