Electrode materials with improved hydrogen degradation resistance and fabrication method
AssigneeSharp Laboratories of America, Inc.
InventorsFengyan Zhang, Tingkai Li, Hong Ying, Yoshi Ono, Sheng Teng Hsu
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AssigneeSharp Laboratories of America, Inc.
InventorsFengyan Zhang, Tingkai Li, Hong Ying, Yoshi Ono, Sheng Teng Hsu
Estimating the term…
An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
A method of forming a hydrogen-resistant electrode in a ferroelectric device, comprising:
A method of forming a hydrogen-resistant electrode in a ferroelectric device, comprising:
Dependencies are inferred from the claim text.