Method of manufacturing thin film and thin film capacitor
AssigneeNEC Corporation
InventorTakashi Hase
Life of this patent
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Abstract
In a method of manufacturing a thin film, a buffer layer is formed a substrate. Thereafter, a ferroelectric thin film material is applied thereto before thermally decomposing the buffer layer. Subsequently, the buffer layer and the ferroelectric thin film are decomposed together. Finally, a crystallized thermal process is performed.
Claims20
A method of manufacturing a thin film on a substrate, comprising the following sequential steps of:
- forming a buffer layer on the substrate;
- applying a ferrocelectric thin film material before performing a first thermal decomposition of the buffer layer;
- performing said first thermal decomposition of the buffer layer and the ferroelectric thin film together;
- and
- performing a crystallization thermal process.
A method of manufacturing a PZT thin film on a substrate, comprising the following sequential steps of:
- forming a buffer layer containing PbTiO3 as main component on the substrate;
- applying a thin film material containing PZT as main component before performing a first organic thermal decomposition of the buffer layer;
- and
- performing said first organic thermal decomposition of the buffer layer and the thin film together;
- and
- performing a crystallization thermal process.
A method of manufacturing a PZT thin film on a substrate comprising the following sequential steps of:
- forming a buffer layer containing PbTiO3 as main component on the substrate;
- baking the buffer layer at a temperature at which organic thermal decomposition does not occur;
- applying a thin film material containing PZT as main component on the buffer layer;
- baking the PZT thin film at a temperature at which the organic thermal decomposition does not occur;
- performing a first organic thermal decomposition of the buffer layer and the thin film together;
- and
- performing a crystallization thermal process.
A method of manufacturing a thin film capacitor on a bottom electrode, comprising the following sequential steps of:
- forming a buffer layer on the bottom portion electrode;
- applying a ferroelectric thin film material before performing a first thermal decomposition of the buffer layer;
- performing said first thermal decomposition of the buffer layer and the ferroelectric thin film together;
- and
- performing a crystallization thermal process.
A method of manufacturing a PZT thin film capacitor on a bottom electrode, comprising the following sequential steps of:
- forming a buffer layer containing PbTiO3 as main component on the bottom electrode;
- applying a thin film material containing PZT as main component before performing a first organic thermal decomposition of the buffer layer;
- and
- performing a said first organic thermal decomposition of the buffer layer and the thin film together;
- and
- performing a crystallization thermal process.
A method of manufacturing a PZT thin film capacitor on a bottom electrode, comprising the following sequential steps of:
- forming a buffer layer containing PbTiO3 as main component on the bottom electrode;
- baking the buffer at a temperature at which organic thermal decomposition does not occur;
- applying a thin film material containing PZT as main component on the buffer layer;
- baking the PZT thin film at a temperature at which the organic thermal decomposition does not occur;
- performing a first organic thermal decomposition of the buffer layer and the thin film together;
- performing a crystallization thermal process;
- and
- forming an upper electrode.
A method of manufacturing a PZT thin film capacitor on a bottom electrode, comprising the following sequential steps of:
- forming a buffer layer containing PbTiO3 as main component on the bottom electrode;
- baking the buffer layer at a temperature at which a first organic thermal decomposition does not occur;
- applying a thin film material containing PZT as main component on the buffer layer;
- baking the PZT thin film at a temperature at which said organic thermal decomposition does not occur;
- performing said first organic thermal decomposition of the buffer layer and the thin film together;
- and
- entirely performing a crystallization thermal process.
Dependencies are inferred from the claim text.