Method of detecting film defects using chemical exposure of photoresist films

A method of inspecting a surface of a semiconductor workpiece for defects, comprising:

• applying a positive-tone photoresist film to the surface;
• baking the positive-tone photoresist film to release solvent therefrom and to facilitate release of any catalyzing substances held by the defects into the positive-tone photoresist film, the catalyzing substances reacting chemically with at least one moiety of the photoresist film to thereby increase the solubility of one or more portions of the positive-tone photoresist film in a developer;
• developing the positive-tone photoresist film with the developer;
• and
• inspecting the surface for the dissolved portions of the positive-tone photoresist film appearing after the developing process, the dissolved portions of the positive-tone photoresist film being indicative of the locations of the defects.

A method of inspecting a dielectric film on a semiconductor workpiece for defects, comprising:

• applying a photoresist primer to the dielectric film;
• applying a negative-tone photoresist film to the dielectric film, the negative-tone photoresist film having actinic sensitivity to deep ultraviolet radiation;
• baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film, the catalyzing substances reacting chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer;
• developing the negative-tone photoresist film with a developer;
• and
• inspecting the dielectric film for the portions of the negative-tone photoresist film remaining after the developing process, the remaining portions of the negative-tone photoresist film being indicative of the locations of the defects.