Deposition of fluorosilsesquioxane films
AssigneeHoneywell International Inc.
InventorNigel P. Hacker
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Abstract
There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
Claims9
A low k dielectric porous film comprising a material that is formed from a vaporized material having the formula
- [HaSiOb]c[FaSiOb]d
- wherein
- a is less than or equal to 1;
- b is greater than or equal to 1.5;
- and
- c and d are members independently selected from the group costing of the integers greater than 10.
The film according to clam 2, wherein said film has a dielectric constant of from about 0.5 to about 2.
Dependencies are inferred from the claim text.