Photoresist removing composition
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsTaketo Maruyama, Hisaki Abe, Tetsuya Karita, Tetsuo Aoyama
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Abstract
A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.
Claims13
A resist removing composition, comprising (a) a quaternary ammonium hydroxide, (b) a water-soluble amine, (c) an alkylpyrrolidone and (d) a sugar or a sugar alcohol.
Dependencies are inferred from the claim text.