Nitride layer forming method
AssigneeMicron Technology, Inc.
InventorRita J. Klein
Life of this patent
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Abstract
Nitride layer formation includes a method where a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.
Claims20
A method of forming an integrated circuit comprising:
- electrodepositing chromium onto a substrate;
- and
- converting at least some of the electrodeposited chromium to a diffusion barrier layer comprising nitrogen and the electrodeposited chromium, said barrier layer being over or under wiring of the integrated circuit.
A method of forming integrated circuit wiring, comprising:
- electrodepositing a chromium-containing material onto a conductive surface;
- and
- exposing the chromium-containing material to a nitrogen-comprising environment and transforming at least some of the chromium-containing material to a chromium nitride diffusion barrier layer over or under wiring of an integrated circuit.
Dependencies are inferred from the claim text.