Process chamber having improved temperature control

An apparatus capable of processing a substrate in a plasma, the apparatus comprising:

• a) a process chamber comprising a support, a process gas distributor, an exhaust, and a ceiling comprising semiconductor material permeable to an RF induction field;
• (b) an inductor antenna adjacent to the ceiling to couple an RF induction field through the ceiling into the process chamber;
• and
• (c) a temperature control system comprising a heat exchanger, and a heat transfer member having a heat conduction surface bonded to the ceiling and a heat transmitting surface thermally coupled to the heat exchanger.

An apparatus capable of processing a substrate in a plasma, the apparatus comprising:

• (a) a process chamber comprising a support, a process gas distributor, an exhaust, and a ceiling comprising a semiconductor material permeable to an RF induction field;
• (b) an inductor antenna adjacent to the ceiling to couple an RF induction field through the ceiling into the process chamber;
• and
• (c) a temperature control system comprising a heat exchanger and a heat transfer member having (i) a heat conduction surface bonded to the ceiling, the heat conduction surface comprising an rms peak-to-peak roughness of less than about 500 angstroms, and (ii) a heat transmitting surface thermally coupled to the heat exchanger.

An apparatus capable of processing a substrate in a plasma, the apparatus comprising:

• (a) a process chamber comprising a support, a process gas distributor, an exhaust, and a ceiling comprising a semiconductor material permeable to an RF induction field;
• (b) an inductor antenna adjacent to the ceiling to couple an RF induction field through the ceiling into the process chamber;
• and
• (c) a temperature control system comprising a heat exchanger and a heat transfer member having (i) a heat conduction surface bonded to the ceiling by a thermally conducting adhesive, and (ii) a heat transmitting surface thermally coupled to the heat exchanger.

An apparatus capable of processing a substrate in a plasma, the apparatus comprising:

• (a) a process chamber comprising a support, a process gas distributor, an exhaust, and a ceiling comprising a semiconductor material permeable to an RF induction field;
• (b) an inductor antenna adjacent to the ceiling to couple an RF induction field through the ceiling to a process gas in the process chamber;
• and
• (c) a temperature control system comprising a heat exchanger, and a heat transfer member (i) having a heat conduction surface bonded to the ceiling and a heat transmitting surface thermally coupled to the heat exchanger, and (ii) comprising silicon carbide, silicon nitride, or mixtures thereof.