System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)

A system for mitigating wafer disformation, comprising:

• at least a first polishing pad and a second polishing pad for polishing a wafer surface;
• a first optical waveguide associated with the first polishing pad and a second optical waveguide associated with the second polishing pad;
• a CMP drive system for selectively applying the first and second polishing pads against the wafer surface at first and second pressures, respectively, wherein the first pressure is different than the second pressure;
• a system for measuring a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad;
• and
• a processor for employing information from the measuring system, the processor employing the information to control the CMP drive system.

A system for mitigating wafer disformation, comprising:

• at least a first polishing pad and a second polishing pad for polishing a wafer surface;
• means for selectively applying the first and second polishing pads against the wafer surface at first and second pressures, respectively, wherein the first pressure is different than the second pressure;
• means for measuring a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad;
• and
• means employing information from the measuring system to control the means for selectively applying the first and second polishing pads against the wafer surface at first and second pressures.

A system for mitigating wafer disformation, comprising:

• a polishing pad for polishing a wafer surface;
• a CMP drive system for selectively applying the polishing pad against a first circumferential region of the wafer surface at a first pressure and applying the polishing pad against a second circumferential region of the wafer surface at a second pressure, wherein the first pressure is different than the second pressure;
• a system for measuring a wafer surface thickness associated with the first circumferential region and a wafer surface thickness associated with the second circumferential region of the wafer;
• and
• a processor for employing information from the measuring system, the processor employing the information to control the CMP drive system.