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US 6,437,550 B2Granted
Voltage generating circuit and reference voltage source circuit employing field effect transistors
AssigneeRicoh Company, Ltd.
InventorsShunsuke Andoh, Hirofumi Watanabe
Life of this patent
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Abstract
A voltage generating circuit includes a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration. The gates are different in impurity concentration by not less than one digit.
Claims44
A voltage generating circuit comprising a plurality of field effect transistors at least partially having gates same in conductivity type but different in impurity concentration.
A reference voltage source circuit comprising:
- a first voltage source circuit comprising a plurality of field effect transistors at least partly having semiconductor gates same in conductivity type but different in impurity concentration and having a positive temperature coefficient;
- and
- a second voltage source circuit comprising a plurality of field effect transistors at least partly having semiconductor gates different in conductivity type and having a negative temperature coefficient.
Dependencies are inferred from the claim text.