Electro-optical device and method for driving the same

A method for forming a transmission type electro-optical display device comprising the steps of:

• forming a plurality of thin film transistors on an insulating surface, each of said thin from transistors having at least a semiconductor film to form a channel region;
• forming an interlayer insulating film comprising an inorganic material on said thin film transistors;
• forming a leveling layer comprising an organic resin over said interlayer insulating film to provide a leveled upper surface;
• forming a plurality of openings in the leveling layer over the respective thin film transistors;
• forming a plurality of pixel electrodes over the leveled upper surface, each of said pixel electrodes being electrically connected to the corresponding thin film transistors through the corresponding openings,
• wherein the respective diameters of at least some of said openings is larger at an uppermost surface of the leaving layer than at a lowermost surface thereof.

A method for forming a transmission type electro-optical display device comprising the steps of:

• forming a plurality of thin film transistors on an insulating surface, each of said thin from transistors having at least a semiconductor film to form a channel region;
• forming an interlayer insulating film comprising an inorganic material on said thin film transistors;
• forming a leveling layer comprising an organic resin over said interlayer insulating film to provide a leveled upper surface;
• forming a plurality of openings in the leveling layer over the respective thin film transistors;
• and
• forming a plurality of pixel electrodes over the leveled upper surface, each of said pixel electrodes being electrically connected to the corresponding thin film transistors through the corresponding openings,
• wherein an inside wall of at least some of said openings is tapered, and
• wherein said organic resin is translucent.

A method of forming a transmission type electro-optical display device comprising the steps of:

• forming at least one thin film transistor on an insulating surface, said thin film transistor having semiconductor film to form a channel region;
• forming an interlayer insulating film comprising an inorganic material on said thin film transistor;
• forming a first opening in said interlayer insulating film over said thin film transistor;
• forming a leveling layer comprising an organic resin over said interlayer insulating film to provide a leveled upper surface;
• forming a second opening in said leveling layer over said thin film transistor;
• and
• forming a pixel electrode over the leveled upper surface, said pixel electrode being electrically connected to said thin film transistor through said first and second openings,
• wherein a diameter of said second opening is larger at an uppermost surface of said leveling layer than at a lowermost surface thereof.