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US 6,436,229 B2Granted
Gas phase silicon etching with bromine trifluoride
AssigneeCalifornia Institute of Technology
InventorsYu-Chong Tai, Xuan-Oi Wang
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Abstract
An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
Claims21
A micromachining assembly, comprising:
- a first receptacle, storing BrF3;
- a second receptacle storing a xenon based dilution material for said BrF3;
- first and second mass flow controls, respectively controlling an amount of BrF3 and xenon based dilution material, said first and second mass flow controls respectively being in series with said first and second receptacles;
- and
- a reaction device, receiving a gas phase material which comprises a desired combination of BrF3 from said first receptacle and xenon based dilution material from said second receptacle.
2 more elements
A micromachined assembly, comprising:
- a first receptacle, which is formed with inner surfaces that are corrosion resistant, and formed to store liquid phase BrF3, and storing said liquid phase BrF3 therein;
- a first valve, controlling delivery of said BrF3;
- a second receptacle, storing a xenon dilution gas therein;
- a second valve, controlling delivery of said xenon dilution gas;
- a mixing reservoir, coupled to outlet sides of said first and second valves, and formed with inner surfaces that are corrosion resistant, receiving gas phase BrF3 and xenon dilution gas when said first and second valves are open;
- a reaction chamber, adapted to store a semiconductor material therein, and to receive an etchant;
- a chamber separation valve, coupled between an outlet of said mixing reservoir and said reaction chamber, and opening to allow mixed gas in said mixing reservoir into said reaction chamber;
- and
- a controller, controlling said valves such that said first and second valves are opened to allow specified amounts of gas to enter said mixing chamber, followed by said first and second valves being closed, and said chamber separation valve being opened to allow the specified amount of mixed vapor to enter said reaction chamber.
6 more elements
Dependencies are inferred from the claim text.