Method and apparatus for the determination of mask rules using scatterometry

An apparatus for determining optical mask corrections for photolithography, comprising:

• A. a printing means for printing a plurality of grating patterns onto a wafer utilizing a mask comprising at least one grating, wherein each grating pattern within said plurality of grating patterns is associated with known photolithographic settings,
• B. an illuminating means for illuminating independently said each grating pattern with a light source, so that light is diffracted off said each grating pattern,
• C. a measuring means for measuring said diffracted light utilizing scatterometry techniques to determine measured diffracted values,
• D. a comparing means for comparing said measured diffracted values to values in a library to determine a profile match,
• E. an assigning means for assigning a profile description to said each grating pattern based on said profile match,
• F. a compiling means for compiling a database of said profile descriptions for said plurality of grating patterns, and
• G. a generating means for generating a set of rules by accessing said database of said profile description, wherein said rules are for mask design and correction.

An apparatus for determining optical mask corrections for photolithography, comprising:

• a light source configured to illuminate a plurality of grating patterns formed on a wafer so that light is diffracted off of the grating pattern;
• a light detector configured to measure the diffracted light;
• and
• a processor configured to:
• compare the measured diffracted light to a library of diffracted light values to determine a profile match for each of the plurality of grating patterns,
• assign a profile description to each of the plurality of grating patterns based on the profile match,
• compile a database of profile descriptions of the plurality of grating patterns, and
• generate a set of rules for mask design and correction based on the database of profile descriptions.