Liquid crystal display device and method of manufacturing the same

A liquid crystal display device comprising:

• a pair of substrates;
• a liquid crystal layer interposed between said pair of substrates;
• and
• drain lines and gate lines formed on one of said pair of substrates and crossing each other in a matrix form;
• wherein at least one of said drain lines and gate lines has a layered structure formed of a first conductive layer and a second conductive layer;
• and
• said first conductive layer includes Al as a main component and said second conductive layer includes Mo in a range between 64 wt. % to 92.7 wt. % and Hf in a range between 7.3 wt. % to 36 wt. %.

A liquid crystal display device comprising:

• a pair of substrates;
• a liquid crystal layer interposed between said pair of substrates;
• and
• drain lines and gate lines formed on one of said pair of substrates and crossing each other in a matrix form;
• wherein at least one of said drain lines and gate lines has a layered structure formed of a first conductive layer, a second conductive layer and a third conductive layer, and
• said second conductive layer includes Al as a main component, said first and third conductive layers include Mo in a range between 77 wt. % to 96 wt. % and Zr in a range between 4 wt. % and 23 wt. %.

A liquid crystal device comprising:

• a liquid crystal layer sandwiched by a pair of substrates;
• a plurality of gate lines formed on one of the pair of substrates;
• a plurality of drain lines intersecting said gate lines in a matrix shape;
• thin film transistors driven in response to supply of a scanning signal from said gate lines;
• an image signal supplied from the drain lines to said pixel electrodes via the thin film transistors;
• and
• a counter electrode formed to face said pixel electrodes, a counter voltage being supplied to said counter electrode via a counter voltage signal line,
• wherein any of said gate lines, said drain lines, said counter voltage signal line, and said counter electrode have a layered structure formed of a first conductive layer and a second conductive layer, and
• said first conductive layer includes Al as a main component and said second conductive layer includes Mo and Zr, the content of the Mo being in a range between 77 wt. % to 96 wt. % and Zr being in a range between 4 wt. % to 23 wt. %.

A liquid crystal display device comprising:

• a liquid crystal layer sandwiched by a pair of substrates;
• a plurality of gate lines formed on one of said pair of substrates;
• a plurality of drain lines intersecting said gate lines in a matrix shape;
• thin film transistors driven in response to supply of a scanning signal from said gate lines;
• and
• an image signal supplied from the drain lines to said pixel electrode via the thin film transistor,
• wherein any of said gate lines and drain lines have a layered structure of a first conductive layer and a second conductive layer, and
• said first conductive layer includes Al as a main component and said second conductive layer includes Mo, Cr, and Zr, the content of the Mo being in a range between 77 wt. % to 96 wt. %, the content of Zr being in a range between 4 wt. % to 23 wt. %, and the content of Cr being in a range of 0.4 wt. % to 1 wt. %.

A liquid crystal display device comprising:

• a liquid crystal layer sandwiched by a pair of substrates;
• a plurality of gate lines formed on one of the said pair of substrates;
• a plurality of drain lines intersecting said gate lines in a matrix shape;
• thin film transistors driven in response to supply of a scanning signal from said gate lines;
• and
• an image signal supplied from the drain lines to said pixel electrode via the thin film transistor;
• wherein an SiN film is formed on the drain electrode and source electrode of the thin film transistor,
• said pixel electrode is formed on the source electrode,
• a through hole is formed in the SiN film to connect said pixel electrode and said source electrode,
• said source electrode has a layered structure of a first conductive layer and a second conductive layer, and
• said first conductive layer includes Al as a main component, and said second conductive layer includes Mo in a range between 77 wt. % to 96 wt. % and Zr in a range between 4 wt. % to 23 wt. %.