Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices
AssigneeInternational Business Machines Corporation
InventorsWalter Riess, Samuel C. Strite
Life of this patent
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Abstract
An organic light emitting device is provided having a substrate (60), an anode contact electrode (64), a cathode contact electrode (61), and an organic region (62, 63) in which electroluminescence takes place if a voltage is applied between the anode (64) and cathode (61). At least one of the electrodes (61, 64) comprises a non-degenerate wide bandgap semiconductor.
Claims34
An organic light emitting device comprising:
- a substrate;
- two contact electrodes, one thereof serving as an anode and the other one serving as a cathode;
- and
- an organic region in which electroluminescence takes place if a voltage is applied between the contact electrodes,
- wherein at least one of the contact electrodes comprises a non-degenerate wide bandgap semiconductor, such that,
- if that contact electrode serves as a cathode, the non-degenerate wide bandgap semiconductor conduction band is essentially aligned with respect to the LUMO of the organic region for injection of electrons from the conduction band (CB) of the non-degenerate wide bandgap semiconductor into the LUMO of the organic region, or such that,
- if that contact electrode serves as an anode, the non-degenerate wide bandgap semiconductor valence band is essentially aligned with respect to the HOMO of the organic region for injection of holes from the valence band (VB) of the non-degenerate wide bandgap semiconductor into the HOMO of the organic region.
An organic light emitting device comprising:
- a substrate;
- two contact electrodes, one thereof serving as an anode and the other one serving as a cathode;
- and
- an organic region in which electroluminescence takes place if a voltage is applied between the contact electrodes,
- wherein at least one of the contact electrodes comprises a non-degenerate wide bandgap semiconductor having a bandgap of at least 2.5 eV, such that,
- if that contact electrode serves as a cathode, the non-degenerate wide bandgap semiconductor conduction band is aligned with respect to the LUMO of the organic region for injection of electrons from the conduction band (CB) of the non-degenerate wide bandgap semiconductor into the LUMO of the organic region, thereby essentially eliminating an electron-injection energy barrier, or such that,
- if that contact electrode serves as an anode, the non-degenerate wide bandgap semiconductor valence band is aligned with respect to the HOMO of the organic region for injection of holes from the valence band (VB) of the non-degenerate wide bandgap semiconductor into the HOMO of the organic region, thereby essentially eliminating a hole-injection energy barrier.
A method of reducing a threshold voltage for electroluminescence in an organic light emitting device having an anode, a cathode, and an organic region in which electroluminescence takes place if a voltage is applied between said anode and said cathode, wherein at least one of said anode and said cathode comprises a non-degenerate wide bandgap semiconductor, said organic region having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), said non-degenerate wide bandgap semiconductor having a valence band (VB) and a conduction band (CB), said threshold value being a minimum value of said applied voltage to cause said electroluminescence, said method comprising at least one of the following:
- aligning said LUMO of said organic region approximately to said CB of said non-degenerate wide bandgap semiconductor;
- and
- aligning said HOMO of said organic region approximately to said VB of said non-degenerate wide bandgap semiconductor.
Dependencies are inferred from the claim text.