Semiconductor device and fabricating method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Tamae Takano, Chiho Kokubo
Life of this patent
Estimating the term…
Abstract
To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped in a region 109, thereafter, heating is performed, nickel element is diffused via paths 110 and 111 and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region 109 by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.
Claims30
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively disposing a catalyst element in contact with first regions of said semiconductor film;
- selectively introducing a gettering element into at least one second region of said semiconductor film;
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction parallel to said substrate, thereby said catalyst element is moved from first regions to said second region.
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively introducing a gettering element into said semiconductor film;
- selectively disposing a catalyst element in contact with said semiconductor film;
- and
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction parallel to said substrate, thereby said catalyst element is moved from regions disposed with said catalyst element to regions introduced with said gettering element.
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively disposing a catalyst element in contact with first regions of said semiconductor film;
- selectively introducing a gettering element into at least one second region of said semiconductor film;
- and
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction from said first regions to said second region, thereby said catalyst element is moved from first regions to said second region.
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively introducing a gettering element into said semiconductor film;
- selectively disposing a catalyst element in contact with said semiconductor film;
- and
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction from regions disposed with said catalyst element to regions introduced with said gettering element, thereby said catalyst element is moved from regions disposed with said catalyst element to regions introduced with said gettering element.
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively disposing a catalyst element in contact with first regions of said semiconductor film;
- selectively introducing a gettering element into at least one second region of said semiconductor film;
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction parallel to said substrate, thereby said catalyst element is moved from first regions to said second region;
- and
- patterning a crystalline semiconductor film for forming at least one semiconductor island excluding said first and second regions.
A method of fabricating a semiconductor device comprising the steps of:
- forming a semiconductor film over a substrate;
- selectively introducing a gettering element into said semiconductor film;
- selectively disposing, a catalyst element in contact with said semiconductor film;
- and
- heating said semiconductor film for crystallizing said semiconductor film in a lateral direction parallel to said substrate, thereby said catalyst element is moved from regions disposed with said catalyst element to regions introduced with said gettering element;
- and
- patterning a crystalline semiconductor film for forming at least one semiconductor island excluding said regions disposed with said catalyst element and said regions introduced with said gettering element.
Dependencies are inferred from the claim text.