Method of making semiconductor supercapacitor system and articles produced therefrom

A method of preparing a thin film composite of BaaTibOc wherein a and b are independently between about 0.75 and about 1.25 and c is about 2.5 to about 5.0 which comprises:

• A. dissolving a reaction mixture of alcohol, barium diacetate and titanium alkoxide in ambient atmosphere;
• B. forming an aqueous solution comprising the product of step A., weak acid and acetyl acetone;
• C. dipping a substrate, into the solution of step B.;
• D. drying the coating of step C at a temperature of from about 300° C. to about 500° C.;
• E. annealing the product of step D at a temperature of from about 600° C. to about 800° C. until crystallization;
• wherein the alcohol, barium diacetate, titanium alkoxide, weak acid and acetyl acetone have a purity of at least 95% and further wherein steps A through E are conducted in a dry nitrogen-rich atmosphere.

A method of preparing a thin film composite comprising MdBaaTibOc wherein “M” is Au, Cu, Ni3Al, Ru or InSn, a and b are independently between about 0.75 to about 1.25, c is about 2.5 to about 5.0, and d is about 0.01 to 0.25, which comprises:

• A. reacting barium diacetate and acetic acid in the presence of an alcohol and a glycol;
• B. mixing titanium tetraacetate with the mixture of step A and adding thereto an aqueous solution containing “M”;
• C. spinning the solution of step B onto a substrate at 500 rpm and then at about 1,000 to about 4,000 rpm until a uniform distribution is obtained;
• D. drying the coated substrate of step C by heating at about 150° C. to about 200° C.;
• E. heating the product of step D at a temperature between about 360° C. to about 400° C. to remove volatile organic material therefrom;
• F. annealing the product of step E at about 500° C. to about 850° C. until crystallization is complete wherein steps A through F are optionally conducted in a nitrogen-rich atmosphere.

A method of preparing a thin film composite of a substrate and a thin filhn, wherein the thin film comprises MdBaaTibOc and wherein the thin film composite enables a storage capacity of at least 0.3 farad/cm3, wherein “M” is Au, Cu, Ni3Al, Ru or InSn, a and b are independently between about 0.75 and about 1.25, c is about 2.5 to about 5.0 and d is about 0.01 to 0.25, which comprises:

• A. reacting a glycol with barium oxide under agitation;
• B. diluting the reaction mixture of step a with an alcohol;
• C. adding titanium alkoxide to the reaction product of step B with agitation;
• D. adding an aqueous solution containing “M” in an alcohol to the product of step C;
• E. depositing the mixture of step D. onto a substrate;
• F. drying the coating of step E at a temperature of form about 150° C. to about 200° C.;
• G. annealing the product of step F. at a temperature of from about 600° C. to about 800° C. until crystallization;
• wherein the glycol, barium oxide, alcohol titanium alkoxide and solution containing “M” have a purity of at least 95% and further wherein steps A. through G. are conducted in a dry nitrogen-rich atmosphere.

A method of preparing a BaaTibOc thin film composite wherein a and b are independently between about 0.75 and about 1.25 and c is about 2.5 to about 5.0 which comprises:

• A. reacting a glycol with barium oxide under agitation;
• B. diluting the reaction mixture of step a with an alcohol;
• C. adding titanium isopropoxide to the reaction product of step B with agitation;
• D. depositing the mixture of step C. onto a substrate;
• E. drying the coating of step D at a temperature of from about 150° C. to about 200° C.;
• and
• F. annealing the product of step E. at a temperature of from about 600° C. to about 800° C. until crystallization;
• wherein the glycol, barium oxide, alcohol and titanium isopropoxide have a purity of at least 95%;
• and further wherein steps A through F are conducted in a dry nitrogen-rich atmosphere.