US 6,429,723 B1 · Integrated circuit with charge pump and method

Abstract

An integrated circuit comprises a first node (11) and a first stage charge pump (510) coupled to the first node (11) and to load circuitry (520). The first stage charge pump comprises a first capacitor (C1) coupled to a first signal source (φ1), a second capacitor (C2) coupled to a second signal source (φ2), a drain (24) of a first n-channel field effect transistor (MN1) coupled to the first capacitor (C1), and a source (20) of the first n-channel field effect transistor (MN1) coupled to the first node (11). A source (36) of a first p-channel field effect transistor (MP1) couples to a second node (12) and a gate (34) of the first p-channel field effect transistor (MP1) couples to the second capacitor (C2). The gate (34) and drain (32) of the first p-channel transistor (MP1) couple to the gate (22) and drain (24) of the first n-channel transistor (MN1), respectively. The charge pump (510) comprises a source (26) of a second n-channel field effect transistor (MN2) coupled to the first node (11) and a gate (28) of the second n-channel transistor (MN2) coupled to the first capacitor (C1). A source (42) of a second p-channel field effect transistor (MP2) couples to the second node (12), and a drain (38) of the second p-channel transistor (MP2) is coupled to the second capacitor (C2). The gate (40) and drain (38) of the second p-channel transistor (MP2) couple to the gate (28) and drain (30) of the second n-channel transistor (MN2), respectively.

Claims20

Dependent claims

A charge pump, comprising:

a first capacitor coupled to a first signal source;
a second capacitor coupled to a second signal source;
a first n-channel field effect transistor comprising a first gate, a first drain coupled to the first capacitor, and a first source coupled to a first node;
a first p-channel field effect transistor comprising a second source coupled to a second node, a second gate coupled to the second capacitor and to the first gate, and a second drain coupled to the first drain;
a second n-channel field effect transistor comprising a third drain, a third source coupled to the first node, and a third gate coupled to the first capacitor;
a second p-channel field effect transistor comprising a fourth source coupled to the second node, a fourth drain coupled to the second capacitor and to the third drain, and a fourth gate coupled to the third gate;
a first resistor coupling the source of the first p-channel transistor to the second node;
and
a second resistor coupling the source of the second p-channel transistor to the second node.

6 more elements

An integrated circuit comprising:

a first stage charge pump coupled to a first node, the first stage charge pump comprising:
a first capacitor coupled to a first signal source;
a second capacitor coupled to a second signal source;
a first n-channel field effect transistor comprising a first gate, a first drain coupled to the first capacitor, and a first source coupled to the first node;
a first p-channel field effect transistor comprising a second source coupled to a second node, a second gate coupled to the second capacitor and to the first gate, and a second drain coupled to the first drain;
a second n-channel field effect transistor comprising a third drain, a third source coupled to the first node, and a third gate coupled to the first capacitor;
a second p-channel field effect transistor comprising a fourth source coupled to the second node, a fourth drain coupled to the second capacitor and to the third drain, and a fourth gate coupled to the third gate;
load circuitry coupled to the second node of the first stage charge pump;
a first resistor coupling the source of the first p-channel transistor to the load circuitry;
and
a second resistor coupling the source of the second p-channel transistor to the load circuitry.

8 more elements

A method for making a charge pump, comprising:

coupling a first capacitor to a first signal source;
coupling a second capacitor to a second signal source;
coupling a source of a first n-channel field effect transistor and a source of a second n-channel field effect transistor to a first node;
coupling a drain of the first n-channel field effect transistor and a gate of the second n-channel field effect transistor to the first capacitor;
coupling a source of a first p-channel field effect transistor and a source of a second p-channel field effect transistor to a second node;
coupling the second capacitor to a gate of the first p-channel field effect transistor and a drain of the second p-channel field effect transistor;
coupling the gate of the first p-channel transistor to the gate of the first n-channel transistor, and the drain of the first p-channel transistor to the drain of the first n-channel transistor;
and
coupling the gate of the second p-channel transistor to the gate of the second n-channel transistor, and the drain of the second p-channel transistor to the drain of the second n-channel transistor;
wherein the coupling to a second node comprises:
coupling with a first resistor the second node to a first back gate and the source of the first p-channel transistor;
and
coupling with a second resistor the second node to a second back gate and the source of the second p-channel transistor.

10 more elements

Dependencies are inferred from the claim text.

Integrated circuit with charge pump and method

Life of this patent

Integrated circuit with charge pump and method

Life of this patent

Abstract

Claims20