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US 6,429,061 B1Granted
Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
AssigneeInternational Business Machines Corporation
InventorKern Rim
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Abstract
A strained Si CMOS structure is formed by steps which include forming a relaxed SiGe layer on a surface of a substrate; forming isolation regions and well implant regions in said relaxed SiGe layer; and forming a strained Si layer on said relaxed SiGe layer. These processing steps may be used in conjunction with conventional gate processing steps in forming a strained MOSFET structure.
Claims12
A method of fabricating a CMOS structure having a strained Si layer formed therein, said method comprising the steps of:
- (a) forming a relaxed SiGe layer on a surface of a substrate;
- (b) forming isolation regions and well implant regions in said relaxed SiGe layer;
- and
- (c) forming a strained Si layer on said relaxed SiGe layer.
1 more element
Dependencies are inferred from the claim text.