Finishing element with finishing aids
AssigneeBeaver Creek Concepts Inc
InventorCharles J Molnar
Life of this patent
Estimating the term…
Abstract
A method of using a finishing element and using organic lubricating films for finishing semiconductor wafers is described. The lubricants in the finishing element can be transferred to operative finishing interface forming lubricating film. The organic lubricating film thickness can be controlled to improve finishing and reduce unwanted surface defects. Differential organic lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer and organic lubricating film methods of finishing.
Claims51
A method of finishing of a semiconductor wafer surface being finished comprising the steps of:
- providing a finishing element finishing surface;
- positioning the semiconductor wafer surface proximate to the finishing surface;
- providing an organic lubricant proximate to the surface of the semiconductor wafer surface being finished;
- applying an operative finishing motion in an interface between the semiconductor wafer surface being finished and the finishing element finishing surface;
- and wherein
- applying the operative finishing motion forms an organic lubricating film layer of at most 10 molecules thick which interacts with and adheres to the semiconductor wafer surface being finished.
A method of finishing of a semiconductor wafer surface having different uniform regions comprising the steps of:
- providing an abrasive finishing surface;
- positioning the semiconductor wafer surface proximate to the abrasive finishing surface;
- providing an organic lubricant between the abrasive finishing surface and the different uniform regions of the semiconductor wafer surface;
- applying an operative finishing motion that transfers the organic lubricant from the abrasive finishing surface to an interface between the abrasive finishing surface and the semiconductor water surface being finished forming an organic lubricating film, and
- controlling the thickness of the organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the interface between the semiconductor wafer surface and the finishing element finishing surface in response to an in situ control signal during at least a portion of the finishing cycle time.
A method of finishing of a semiconductor wafer surface having a conductive region being finished comprising the steps of:
- providing an abrasive finishing surface;
- providing an organic boundary lubricant between the abrasive finishing surface and the conductive region of the semiconductor wafer surface being finished;
- and
- applying an operative finishing motion between the semiconductor wafer surface being finished and the abrasive finishing surface forming a heterogeneous organic lubricating film of at most 10 molecules thick on the conductive region of the semiconductor wafer surface wherein:
- the operative finishing motion forms a friction in the interface between the conductive region on the semiconductor wafer surface and the finishing element finishing surface;
- and
- the organic lubricating film interacts with and adheres to the conductive region on the semiconductor wafer surface.
A method of finishing of a semiconductor wafer surface being finished having uniform regions and a plurality of wafer die, each wafer die having a repeating pattern of unwanted raised regions, the method comprising the steps of:
- providing an abrasive finishing element finishing surface;
- providing an organic lubricant to an interface between the abrasive finishing element finishing surface and the semiconductor wafer surface being finished;
- and
- applying an operative finishing motion to the interface between the abrasive finishing element finishing surface and the semiconductor wafer surface being finished forming an organic lubricating film with a thickness of at most 6 molecules on at least a portion of the semiconductor wafer surface being finished.
A method of finishing of a semiconductor wafer surface being finished having uniform regions having a plurality of unwanted raised regions, the method comprising the steps of:
- providing an abrasive finishing element finishing surface;
- providing an organic lubricant to an interface between the semiconductor wafer surface and the finishing element finishing surface;
- and
- applying an operative finishing motion forming a marginal organic lubricating film on at least a portion of the semiconductor wafer surface being finished and wherein the operative finishing motion forms a friction in the interface between the uniform regions of the semiconductor wafer surface and the finishing element finishing surface and the organic lubricating film adheres to the uniform regions of the semiconductor wafer surface;
- and
- controlling the marginal organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the interface between the semiconductor wafer surface and the finishing element finishing surface in response to an in situ control signal during at least a portion of the finishing cycle time.
A method of finishing of a semiconductor wafer surface having a conductive region being finished comprising the steps of:
- providing an abrasive finishing element finishing surface;
- providing an organic boundary lubricant between the abrasive finishing element finishing surface and the conductive region of the semiconductor wafer surface being finished;
- and
- applying an operative finishing motion between the semiconductor wafer surface being finished and the abrasive finishing element finishing surface forming a heterogeneous organic lubricating film of at most 10 molecules thick on the conductive region of the semiconductor wafer surface wherein:
- the operative finishing motion forms a friction in the interface between the conductive region on the semiconductor wafer surface and the finishing element finishing surface;
- and
- the organic lubricating film interacts with and adheres to the conductive region on the semiconductor wafer surface;
- and wherein
- the semiconductor wafer surface has at least one unwanted raised region wherein the organic lubricating film thickness is less on the unwanted raised region and the organic lubricating film thickness is greater on at least a portion of the semiconductor surface below and proximate to the unwanted raised region.
A method of finishing of a semiconductor wafer surface having at least two different uniform regions being finished comprising the steps of:
- providing a finishing element finishing surface;
- providing an organic lubricant to an interface between the semiconductor wafer surface and the finishing element finishing surface;
- and
- applying an operative finishing motion to the interface between the semiconductor wafer surface and the finishing element finishing surface forming a marginal organic lubricating film and the organic lubricating film adheres to the semiconductor wafer surface and wherein the operative finishing motion forms a friction in the interface between the semiconductor wafer surface and the finishing element finishing surface;
- and
- controlling the marginal organic lubricating film by changing at least one control parameter in a manner that changes the coefficient of friction in at least two different uniform regions of the interface between the semiconductor wafer surface and the finishing element finishing surface in response to an in situ control signal during at least a portion of the finishing cycle time;
- and
- inducing tribochemical wear to the semiconductor wafer surface being finishing.
Dependencies are inferred from the claim text.