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US 6,426,512 B1Granted
Group III nitride compound semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorsJun Ito, Toshiaki Chiyo, Naoki Shibata, Hiroshi Watanabe, Shizuyo Asami, Shinya Asami
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Abstract
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
Claims12
A semiconductor device, comprising:
- a substrate;
- an undercoat layer formed on said substrate and containing metal nitride;
- a group III nitride compound semiconductor layer formed on said undercoat layer;
- and
- a titanium layer interposed between said undercoat layer and said group III nitride compound semiconductor layer.
2 more elements
A semiconductor device, comprising:
- a substrate;
- an undercoat layer formed on said substrate and containing metal nitride;
- and
- a group III nitride compound semiconductor layer formed on said undercoat layer,
- wherein said undercoat layer includes a titanium layer formed on said substrate, and a heat-resisting layer interposed between said substrate and said titanium layer to thermally insulate said substrate and said titanium layer from each other.
2 more elements
Dependencies are inferred from the claim text.