Electron beam modification of perhydrosilazane spin-on glass
AssigneeElectron Vision Corporation
InventorsMatthew Ross, Heike Thompson
Life of this patent
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Abstract
The invention pertains to dielectric films for the production of microelectronic devices. A spin-on glass film is produced by depositing a silazane polymer containing composition film onto a substrate and then exposing the film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
Claims36
A process for forming a dielectric coating on a substrate which comprises
- a) applying a silazane polymer containing composition onto a substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition, wherein the electron beam irradiating is conducted with a uniform, large-area, overall electron beam exposure source which simultaneously exposes substantially all of the silazane polymer containing composition simultaneously.
A process for forming a dielectric coating on a substrate which comprises
- a) applying a silazane polymer containing composition onto a substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition, wherein each electron beam irradiating is conducted with a uniform large-area electron beam source which covers an exposure area of from about 4 square inches to about 256 square inches simultaneously.
A process for forming a dielectric coating on a substrate which comprises
- a) applying a silazane polymer containing composition onto a substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition, wherein each electron beam irradiating is conducted while heating the substrate to a temperature of from about 100° C. to about 400° C.
A process for forming a dielectric coating on a substrate which comprises
- a) applying a silazane polymer containing composition onto a substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition;
- and
- d) heating the silazane polymer containing composition at a temperature of from about 50° C. to about 500° C.
A process for producing a microelectronic device which comprises
- a) applying a silazane polymer containing composition onto an insulating or semiconducting substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition;
- and
- d) applying a chemical vapor deposited oxide film on the cured silazane polymer containing composition.
A process for producing a microelectronic device which comprises
- a) applying a silazane polymer containing composition onto an insulating or semiconducting substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition;
- and
- d) forming vias in the cured silazane polymer containing composition.
A process for producing a microelectronic device which comprises
- a) applying a silazane polymer containing composition onto an insulating or semiconducting substrate, wherein the silazane polymer containing composition comprises a perhydrosilazane polymer;
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition.
A process for curing a silazane polymer containing composition which comprises
- a) applying a silazane polymer containing composition onto a substrate,
- b) optionally heating the composition to evaporate any solvents therefrom;
- and
- c) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition, wherein the electron beam irradiating is conducted with a uniform, large-area, overall electron beam exposure source which simultaneously exposes substantially all of the silazane polymer containing composition simultaneously.
A process for forming a dielectric coating on a substrate which comprises
- a) applying a silazane polymer containing composition onto a substrate, and
- b) overall irradiating the composition with electron beam radiation under conditions sufficient to cure the silazane polymer containing composition, wherein the electron beam irradiating is conducted with a uniform, large-area, overall electron beam exposure source which simultaneously exposes substantially all of the silazane polymer containing composition simultaneously.
Dependencies are inferred from the claim text.