Substrate-cleaning method and substrate-cleaning solution
AssigneeNEC Corporation
InventorHidemitsu Aoki
Life of this patent
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Abstract
In cleaning a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment, the substrate is first cleaned with a first cleaning solution containing ammonia water, etc. and then with a second cleaning solution containing (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material, etc. and (b) an anionic or cationic surfactant.
Claims15
A substrate-cleaning method used for cleaning of a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment with a polishing solution, said method comprising the steps of:
- (A) a first step of cleaning said substrate with a first cleaning solution containing ammonia water or an aqueous catholyte generated in electrolysis, and
- (B) a second step of cleaning the substrate after the first step (A) with a second cleaning solution (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material or the oxide of the metal contained in said polishing solution, and (b) an anionic or cationic first surfactant, wherein the first surfactant is C8H17N(CH3)3Br or C12H25N (C2H5)(CH3)2Br.
A substrate-cleaning method used for cleaning of a substrate which has a metal material and a semiconductor material both exposed at the surface and which has been subjected to a chemical mechanical polishing treatment with a polishing solution, said method comprising the steps of:
- (A) a first step of cleaning said substrate with a first cleaning solution containing ammonia water or an aqueous catholyte generated in electrolysis, and
- (B) a second step of cleaning the substrate after the first step (A) with a second cleaning solution (a) a first complexing agent capable of easily forming a complex with the oxide of said metal material or the oxide of the metal contained in said polishing solution, and (b) an anionic or cationic first surfactant,
- wherein the first cleaning solution further contains an anionic or cationic second surfactant,
- wherein the second surfactant is C8H17N(CH3)3Br or C12H25N (C2H5)(CH3)2Br.
Dependencies are inferred from the claim text.