GaN single crystal substrate and method of producing same

Abstract

A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a GaN epitaxial layer on the buffer layers and the mask by an HVPE or an MOC, eliminating the GaAs substrate and the mask away and obtaining a freestanding GaN single crystal substrate. The GaN single crystal has a diameter larger than 20 mm and a thickness more than 0.07 mm, being freestanding and substantially distortion-free.

Dependencies are inferred from the claim text.