Finishing element including discrete finishing members
AssigneeBeaver Creek Concepts Inc
InventorCharles J Molar
Life of this patent
Estimating the term…
Abstract
Unitary finishing elements having discrete finishing members fixedly attached to unitary resilient body are disclosed for finishing semiconductor wafers. The discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements can reduce unwanted surface defect creation on the semiconductor wafers during finishing.
Claims76
A unitary finishing element having a plurality of discrete finishing members for finishing a semiconductor wafer surface comprising:
- discrete finishing members wherein:
- each discrete finishing member has a surface area of less than the surface area of the semiconductor wafer surface being finished;
- each discrete finishing member has a discrete finishing member finishing surface and a finishing member body;
- each finishing member body is comprised of a continuous region of higher flexural modulus organic synthetic resin;
- and
- a ratio of the shortest distance across in centimeters of the discrete finishing member body to the thickness in centimeters of each discrete finishing member body is at least 10/1;
- a unitary resilient body comprised of an organic polymer wherein the unitary resilient body has a plurality of discrete finishing members fixedly attached to the unitary resilient body in such a manner that each discrete finishing member is separate from its nearest discrete finishing member;
- and
- the unitary resilient body of organic polymer has a lower flexural modulus than the higher flexural modulus organic synthetic resin in the finishing member body.
A unitary finishing element having a plurality of discrete finishing members for finishing a semiconductor wafer having a plurality of dies comprising:
- a plurality of discrete finishing members wherein:
- each discrete finishing member has a discrete finishing member finishing surface and a finishing member body;
- each finishing member body is comprised of a continuous region of material having a higher flexural modulus;
- and
- each discrete finishing member finishing surface has a surface area of less than the surface area of the semiconductor wafer being finished and more than the die surface area;
- a uniary resilient body comprised of an organic polymer and wherein the unitary resilient body has the plurality of separate and distinct finishing members fixedly attached to the unitary resilient body;
- and wherein
- the unitary resilient body of organic polymer having a lower flexural modulus than the higher flexural modulus material in the finishing member body;
- and
- the discrete finishing members are separated from their nearest discrete finishing member neighbor by at least ½ times the thickness of the discrete finishing member thickness in centimeters.
A method of finishing a semiconductor wafer being finished with a unitary finishing element having a plurality of discrete finishing members comprising the steps of:
- providing a unitary finishing element comprising:
- the plurality of discrete finishing members wherein:
- each discrete finishing member has a surface area of less than the surface area of the semiconductor wafer being finished;
- each discrete finishing member has a discrete finishing member finishing surface and a finishing member body;
- and
- each finishing member body is comprised of a continuous region of material having a higher flexural modulus;
- a unitary resilient body comprised of an organic polymer and wherein the unitary resilient body has the plurality of separate and distinct finishing members fixedly attached to the unitary resilient body;
- and
- the unitary resilient body of organic polymer has a lower flexural modulus than the higher flexural modulus material in the finishing member body;
- positioning the semiconductor wafer being finished proximate to the unitary finishing element with a finishing element support;
- applying an operative finishing motion with a finishing pressure between the semiconductor wafer surface being finished and the discrete finishing members in the unitary finishing element;
- and
- finishing at a higher finishing rate measured in angstroms per minute on a plurality of higher local regions as compared to a plurality of low local regions proximate to the higher local regions on the semiconductor wafer surface being finished.
A process for chemical mechanical finishing with a multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having a continuous phase of thermoplastic synthetic polymer “A” and a synthetic polymer “B” and wherein the multiphase composition has at least two distinct glass transition temperatures;
- and
- a compatibilizing polymer “C”;
- and the process for chemical mechanical finishing comprises the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
The process for chemical mechanical finishing with the multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having at least one filtered polymer which removes particles having a maximum dimension of 20 microns or more capable of scratching a semiconductor wafer surface, the filtering done before adding the at least one filtered polymer to the multiphase polymeric composition;
- and the process for chemical mechanical finishing comprising the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
A method for finishing a semiconductor wafer surface being finished with a multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having:
- a continuous phase of thermoplastic synthetic polymer “A”;
- discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of thermoplastic synthetic polymer “A”;
- and
- wherein the multiphase composition has at least two distinct glass transition temperatures;
- and
- a compatibilizing agent “C”;
- and the process for finishing comprises the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having:
- a continuous phase of synthetic polymer “A”;
- discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of synthetic polymer “A”;
- and
- wherein the multiphase composition has at least two distinct glass transition temperatures;
- and
- a compatibilizing agent “C”;
- and the process for finishing comprises the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having:
- a continuous phase of synthetic polymer “A”;
- discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of synthetic polymer “A”;
- and
- wherein the synthetic polymer “A” is dynamically reacted with the synthetic polymer “B” forming a multiphase polymeric mixture with higher Ultimate Tensile Strength as measured by ASTM D 638 than that of the same multiphase polymeric mixture in the absence of a dynamic reaction between the two synthetic polymers;
- and
- wherein the mulfiphase composition has at least two distinct glass transition temperatures;
- and the process for finishing comprises the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
A process for finishing a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:
- a multiphase synthetic polymer composition having:
- a continuous phase of synthetic polymer “A”;
- discrete particles comprising synthetic polymer “B” dispersed in the continuous phase of thermoplastic synthetic polymer “A” and wherein synthetic polymer “B” comprises a polymer selected from the group consisting of polyurethanes, polyolefins, polyesters, polyamides, polystyrenes, polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylene propylene elastomers, butyl polymers, polybutaienes, polyisoprenes, EPDM elastomers,, and styrene butadiene elastomers;
- and
- wherein the synthetic polymer “A” is dynamically reacted with the synthetic polymer “B” forming a multiphase polymeric mixture with a higher Fatigue Endurance as measured by ASTM D 671 than that of the same multiphase polymeric mixture in the absence of the a dynamically reaction between the two synthetic resins is preferred;
- and
- wherein the multiphase composition has at least two distinct glass transition temperatures;
- and the process for finishing comprises the steps of:
- applying the multiphase polymeric composition to a semiconductor wafer surface;
- and
- operatively finishing a semiconductor wafer with the multiphase polymeric composition.
Dependencies are inferred from the claim text.