Method for forming film with low dielectric constant on semiconductor substrate
AssigneeASM Japan K.K.
InventorNobuo Matsuki
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Abstract
In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, the improvement can be achieved by lengthening a residence time, Rt, of a reaction gas in the reactor, wherein 100 msec≦Rt. The film includes insulation films and mask films.
Claims10
In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, wherein the improvement comprises reducing a relative dielectric constant of the film by lengthening a residence time, Rt, of the reaction gas in the reactor, wherein 100 msec≦Rt,
- Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
- wherein:
- Pr:
- reaction chamber pressure (Pa)
- Ps:
- standard atmospheric pressure (Pa)
- Tr:
- average temperature of the reaction gas (K)
- Ts:
- standard temperature (K)
- rw:
- radius of the silicon substrate (m)
- d:
- space between the silicon substrate and the upper electrode (m)
- F:
- total flow volume of the reaction gas (sccm).
A method for reducing a relative dielectric constant of an insulation film formed on a semiconductor substrate by plasma reaction, wherein an insulation film comprising:
- introducing a reaction gas into a reactor wherein a semiconductor substrate is placed;
- activating plasma reaction in the reactor;
- lengthening a residence time, Rt, of the reaction gas in the reactor, wherein 100 msec≦Rt,
- Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
- wherein:
- Pr:
- reaction chamber pressure (Pa)
- Ps:
- standard atmospheric pressure (Pa)
- Tr:
- average temperature of the reaction gas (K)
- Ts:
- standard temperature (K)
- rw:
- radius of the silicon substrate (m)
- d:
- space between the silicon substrate and the upper electrode (m)
- F:
- total flow volume of the reaction gas (sccm).
Dependencies are inferred from the claim text.