Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device
AssigneesSeiko Epson Corporation, Mitsubishi Denki Kabushiki Kaisha
InventorsMitsutoshi Miyasaka, Takao Sakamoto
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Abstract
The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.
Claims26
A method for manufacturing a silicon oxide film comprising:
- forming a silicon oxide film by vapor deposition;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein the wavelength of said infrared light is between about 8.9 μm and 10.0 μm.
A method for manufacturing a semiconductor device comprising:
- oxidizing a semiconductor surface to form a silicon oxide film on the semiconductor surface;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein the wavelength of said infrared light is between about 8.9 μm and 10.0 μm.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating material;
- forming a silicon oxide film on the semiconductor film;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein the wavelength of said infrared light is between about 8.9 μm and 10.0 μm.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating material;
- forming a silicon oxide film on the semiconductor film;
- and
- irradiating infrared light onto the silicon oxide film,
- wherein the wavelength of said infrared light is between about 8.9 μm and 10.0 μm.
Dependencies are inferred from the claim text.