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US 6,404,665 B1Granted
Compositionally modified resistive electrode
AssigneeIntel Corporation
InventorsTyler A. Lowrey, Daniel Xu, Chien Chiang, Patrick J. Neschleba
Life of this patent
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Abstract
An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
Claims22
An apparatus comprising:
- a volume of memory material;
- a conductor;
- and
- an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the first portion to an ambient.
1 more element
An apparatus comprising:
- a chalcogenide memory element;
- and
- a heater element in thermal communication with the chalcogenide memory element, the heater element comprising:
- a first zone having a first resistivity and a first thermal coefficient of resistivity;
- and
- a second zone formed by exposing a portion of the first zone to an ambient and having a second resistivity and a second thermal coefficient of resistivity, wherein the first resistivity is lower than the second resistivity, and wherein the second thermal coefficient of resistivity has a lower variation to positive temperature change than the first thermal coefficient of resistivity.
3 more elements
An apparatus comprising:
- a plurality of memory elements, each memory element comprising a volume of memory material having two resistivity values, the volume of memory material being settable to one of the resistivity values in response to a selected electrical input signal;
- a conductor coupled to each memory element;
- and
- an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value formed by exposing the electrode to an ambient.
1 more element
A method comprising:
- introducing between two conductors formed on a substrate an electrode material;
- modifying a portion of the electrode material so that the electrode material comprises a first portion and a different second portion by exposing the electrode material to a gaseous ambient;
- and
- introducing a volume of memory material over the electrode material, the electrode material and the volume of memory material coupled to a conductor.
1 more element
Dependencies are inferred from the claim text.