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AssigneeHewlett-Packard Company
InventorsKenneth Koch, II, William Weiner
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The present invention discloses a floating body architecture CMOSFET inverter with body biasing inverters added for controlling the delay time of the inverter. At least one body biasing inverter is connected between the main inverter's input and the body terminals of the FETs of the inverter. By supplying a representation of the input voltage to the body terminals of the p-channel and n-channel FETs, the preferred embodiment of the present invention is able to control the history dependent delay time associated with the variable source-to-body voltages in floating body CMOSFET inverters. The delay time is minimized by adding an odd number of body biasing inverter stages into the main inverter circuit. The delay time can also be maximized by adding an even number of body biasing inverter stages into the circuit.
A complementary metal oxide semiconductor field effect transistor (CMOSFET) inverter comprising:
A method for manipulating a delay time in a silicon on insulator-(SOI) constructed complementary metal oxide semiconductor field effect transistor (CMOSFET) inverter comprising the steps of:
A complementary metal oxide semiconductor field effect transistor (CMOSFET) inverter having a floating body configuration comprising:
A complementary metal oxide semiconductor field effect transistor (CMOSFET) inverter having a floating body configuration comprising:
Dependencies are inferred from the claim text.