Method for fabricating a semiconductor device having recessed SOI structure
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsChang Yong Kang, Myoung Kyu Park
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Abstract
A semiconductor device having a recessed silicon on insulator (SOI) structure includes an SOI substrate having a cell region, a peripheral region and a field region, the SOI substrate having a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer, a trench in the field region of the second semiconductor layer, a device isolation film within the trench, a peripheral region recessed in the second semiconductor layer, and an active semiconductor device on the cell region and the peripheral region of the second semiconductor layer.
Claims6
A method for fabricating a semiconductor device based on a SOI structure having an SOI substrate including a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer, the semiconductor device having a cell region, a peripheral region and a field region, the method comprising the steps of:
- forming a field insulating film within the second semiconductor layer of the peripheral region and on a surface of the second semiconductor layer;
- forming a trench in the field region of the second semiconductor layer;
- forming a device isolation film within the trench;
- and
- removing the field insulating film to form a recessed peripheral region.
Dependencies are inferred from the claim text.