Projection exposure apparatus and method
AssigneeNikon Corporation
InventorsKenji Nishi, Kazuya Ota
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AssigneeNikon Corporation
InventorsKenji Nishi, Kazuya Ota
Estimating the term…
Two stages (WS1), (WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PL). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage (WS1) in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section (EPS) to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.
A projection exposure method for exposing sensitive substrates by projecting a pattern formed on a mask through a projection optical system onto the sensitive substrates, comprising:
A projection exposure method for exposing sensitive substrates by projecting an image of a pattern formed on a mask via a projection optical system onto the sensitive substrates, comprising:
A projection exposure method for exposing sensitive substrates by projecting a pattern formed on a mask through a projection optical system onto the sensitive substrates, comprising:
A projection exposure apparatus for sequentially exposing sensitive substrates by projecting a pattern formed on a mask illuminated with an exposure beam, the apparatus comprising:
A projection exposure apparatus for sequentially exposing sensitive substrates by projecting a pattern formed on a mask illuminated with an exposure beam, the apparatus comprising:
Dependencies are inferred from the claim text.