Production process and apparatus for high purity silicon
AssigneeNippon Steel Corporation
InventorsJiro Kondo, Haruo Shimada, Shinji Tokumaru, Ryuji Watanabe, Atsushi Nogami, Akihito Kiyose
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Abstract
It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000° C. and lower than 1730° C., for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO2, and the produced Si is separated from the SiO2 and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO2 is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid.
Claims18
A production process for Si wherein solid silicon monoxide is heated in a reaction system at a temperature of at least 1000° C. and no higher than 1730° C., for a disproportionation reaction in which said solid SiO is decomposed to liquid or solid silicon and solid silicon dioxide, and the produced Si is separated from the SiO2 and any remaining SiO, said reaction is carried out under conditions such that the molar ratio of Si and SiO2 produced by said disproportionation reaction is 1:X, and 1.5≧X≧0.5.
Dependencies are inferred from the claim text.