Method of forming metal colloids, metal colloids and method of forming a metal oxide sensitive layer for a chemical sensor device
AssigneeMotorola, Inc.
InventorsPierre Fau, Celine Nayral, Bruno Chaudret, Andre Maisonnat
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Abstract
A method of forming a metal colloid comprising a plurality of particles, each particle comprising a core of a metal, is described. The method comprises the steps of providing an organometallic precursor comprising the metal, combining the organometallic precursor and a solvent, which comprises water molecules, heating the combination of organometallic precursor and solvent so that the organometallic precursor decomposes to form a solution including the metal colloid and by-products, and removing the by-products to provide the metal colloid.
Claims10
A method of forming a metal colloid comprising a plurality of particles, each particle comprising a core of a metal, the method comprising the steps of:
- providing an organometallic precursor comprising the metal;
- combining the organometallic precursor and a solvent, the solvent comprising water molecules;
- heating the combination of organometallic precursor and solvent so that the organometallic precursor decomposes to form a solution including the metal colloid and by-products wherein the decomposition of the organometallic precursor is performed without the aid of a reducing agent;
- and
- removing the by-products to provide the metal colloid.
A method of forming a metal oxide sensitive layer for a chemical sensor device comprising the steps of:
- forming a metal colloid comprising a plurality of particles, each particle comprising a core of a metal, the forming a metal colloid step comprising the steps of:
- providing an organometallic precursor comprising the metal,
- combining the organometallic precursor and a solvent, the solvent comprising water molecules,
- heating the combination of organometallic precursor and solvent so that the organometallic precursor decomposes to form a solution including the metal colloid and by-products wherein the decomposition of the organometallic precursor is performed without the aid of a reducing agent;
- and
- removing the by-products to provide the metal colloid;
- forming a layer of the metal colloid on a semiconductor layer which layer is part of the chemical sensor device;
- oxidising the metal colloid layer to provide a metal oxide layer on the semiconductor layer;
- and
- removing a portion of the metal oxide layer, a remaining portion of the metal oxide layer forming the metal oxide sensitive layer.
Dependencies are inferred from the claim text.