Display device having a thin film transistor and electronic device having such display device

A semiconductor device comprising:

• a semiconductor film formed on an insulating surface;
• a first insulating film formed on the semiconductor film;
• a gate electrode and a first wiring formed on the first insulating film;
• a second insulating film formed on the gate electrode and the first wiring;
• a second wiring connected to the gate electrode, formed on the second insulating film;
• and
• a third insulating film formed on the second wiring,
• wherein the first wiring and the semiconductor film overlap via the first insulating film therebetween.

A semiconductor device comprising:

• a plurality of scanning lines formed over a substrate;
• a plurality of signal lines formed over said substrate, extending in an orthogonal relation to said plurality of scanning lines;
• a plurality of thin film transistors disposed at intersections of said scanning lines and said signal lines, each of said thin film transistors comprising a semiconductor layer having a channel forming region and a gate electrode formed over the channel forming region with a gate insulating film interposed therebetween;
• a plurality of capacitor lines formed over said semiconductor layer with said gate insulating film interposed therebetween;
• a first interlayer insulating film formed over said plurality of thin film transistors and said capacitor lines wherein said scanning lines are formed on said first interlayer insulating film and electrically connected to said thin film transistors through contact holes of said first interlayer insulating film;
• a second interlayer insulating film formed over said scanning lines;
• and
• a plurality of pixel electrodes formed over said second interlayer insulating film,
• wherein said scanning lines overlap said capacitor lines with said first interlayer insulating film interposed therebetween to form a plurality of storage capacitors therebetween.

A semiconductor device comprising:

• a plurality of scanning lines formed over a substrate;
• a plurality of signal lines formed over said substrate, extending in an orthogonal relation to said plurality of scanning lines;
• a plurality of thin film transistors disposed at intersections of said scanning lines and said signal lines, each of said thin film transistors comprising a semiconductor layer having a channel forming region and a gate electrode formed over the channel forming region with a gate insulating film interposed therebetween;
• a plurality of capacitor lines formed over said semiconductor layer with said gate insulating film interposed therebetween;
• and
• a plurality of pixel electrodes formed over said substrate and operationally connected to said plurality of thin film transistors,
• wherein said capacitor lines extend in a direction parallel with said signal lines.