Porous materials
AssigneeShipley Company, L.L.C.
InventorsRobert H. Gore, Michael K. Gallagher, Scott A. Ibbitson
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Abstract
Porous polyimide dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous polyimide dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous polyimide dielectric material.
Claims19
A method of preparing porous polyimide dielectric materials comprising the steps of:
- a) dispersing removable cross-linked polymeric porogen particles in B-staged polyimide dielectic material to form B-staged polyimide dielectric matrix material;
- b) forming a film of the B-staged polyimide dielectric matrix material;
- c) curing the B-staged polyimide dielectric matrix material to form a polyimide dielectric matrix material;
- and d) subjecting the polyimide dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous polyimide dielectric material without substantially degrading the polyimide dielectric material;
- wherein the porogen particles are soluble in the B-staged polyimide dielectric matrix material and wherein the porogen particles comprise as polymerized units at least one monomer capable of hydrogen-bonding with the B-staged polyimide dielectric matrix material.
A method of preparing an integrated circuit comprising the steps of:
- a) depositing on a substrate a layer of a composition including B-staged polyimide dielectric matrix material having cross-linked polymeric porogen particles dispersed therein;
- b) curing the B-staged polyimide dielectric matrix material to form a polyimide dielectric matrix material;
- c) subjecting the polyimide dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous polyimide dielectric material layer without substantially degrading the polyimide dielectric material;
- d) patterning the polyimide dielectric layer;
- e) depositing a metallic film onto the patterned polyimide dielectric layer;
- and f) planarizing the film to form an integrated circuit;
- wherein the porogen particles are soluble in the B-staged polyimide dielectric matrix material and wherein the porogen particles include as polymerized units at least one monomer capable of hydrogen-bonding with the B-staged polyimide dielectric matrix material.
A composition comprising a B-staged polyimide dielectric matrix material and cross-linked polymeric porogen particles, wherein the porogen particles are soluble in the B-staged polyimide dielectric matrix material and wherein the porogen particles comprise as polymerized units at least one monomer capable of hydrogen-bonding with the B-staged polyimide dielectric matrix material.
Dependencies are inferred from the claim text.