DRAM circuit having a testing unit and its testing method
AssigneeUnited Microelectronics Corp.
InventorHsin Pang Lu
Life of this patent
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AssigneeUnited Microelectronics Corp.
InventorHsin Pang Lu
Estimating the term…
The invention relates to a memory having test units and its testing method. The memory comprises a plurality of word lines, a plurality of bit line groups each having two bit lines, a memory unit connected between each of the word lines and one bit line of each of the bit line groups, a plurality of writing units, a plurality of testing units, a plurality of bit line switches. When testing the memory unit, the control circuit first initiates the memory unit by using the word line connected to the memory unit, and then uses the writing unit connected to the memory unit to write a predetermined binary data bit into the memory unit through one output port of the writing unit connected to the memory unit and the bit line switch and bit line connected between the output port of the writing unit and the memory unit, and then switches off the bit line switch to disconnect the bit line connected to the output port of the writing unit, and finally using the testing unit connected to the output port and the disconnected bit line to test if the binary data bit outputted from the memory unit to the disconnected bit line is the same as the binary data bit outputted from the output port.
A memory circuit comprising:
A method for testing a memory circuit,
A memory circuit comprising:
Dependencies are inferred from the claim text.