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US 6,389,051 B1Granted
Structure and method for asymmetric waveguide nitride laser diode
AssigneeXerox Corporation
InventorsChristian G. Van de Walle, David P. Bour, Michael A. Kneissl, Linda T. Romano
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Abstract
A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.
Claims15
An asymmetric waveguide nitride laser diode structure comprising:
- an active layer having a first and second surface;
- an electronic confinement layer interposed between said first surface of said active layer and a p-cladding layer, said electronic confinement layer having a larger band gap than said p-cladding layer;
- and
- an n-type layer adjacent to said second surface of said active layer.
1 more element
An asymmetric waveguide nitride laser diode structure comprising:
- an active layer having a first and second surface;
- an electronic confinement layer interposed between said first surface of said active layer and a p-cladding layer, said electronic confinement layer having a larger band gap than said p-cladding layer;
- and
- an n-type waveguide layer interposed between said second surface of said active layer and an n-cladding layer.
1 more element
A method for making an asymmetric waveguide nitride laser diode structure comprising the operations of:
- forming an n-type layer;
- forming an active layer having a first surface adjacent to the n-type layer;
- forming an electronic confinement layer, the electronic confinement layer adjacent to a second surface of the active layer;
- and,
- depositing a p-cladding layer with a band gap smaller than the band gap of the electronic confinement layer, the p-cladding layer in contact with the electronic confinement layer.
2 more elements
Dependencies are inferred from the claim text.