Semiconductor memory and method of operating semiconductor memory

A semiconductor memory comprising:

• a second conductivity type first region and a second conductivity type second region formed on a first layer consisting of a first conductivity type semiconductor;
• a first gate electrode and a second gate electrode formed on said first layer between said first region and said second region;
• a second conductivity type third region formed on said first layer between said first gate electrode and said second gate electrode;
• a first insulator film formed between said first gate electrode and said third region;
• and
• a second insulator film formed between said second gate electrode and said third region.

A semiconductor memory comprising:

• a second conductivity type first region and a second conductivity type second region formed on a first layer consisting of a first conductivity type semiconductor;
• a first gate electrode formed on said first layer;
• a second gate electrode formed on said first layer between said first region and said second region;
• a second conductivity type third region formed between either said first gate electrode or said second region on said first layer and said second gate electrode;
• a first insulator film formed on one surface of said third region;
• and
• a second insulator film formed on another surface of said third region.

A method of operating a semiconductor memory, said method comprising the steps of:

• forming a second conductivity type first region and a second conductivity type second region on a first layer consisting of a first conductivity type semiconductor;
• forming a first gate electrode on said first layer between said first region and said second region through a first gate insulator film with respect to said first layer;
• forming a second gate electrode on said first layer between said first region through a second gate insulator film with respect to said first layer;
• forming a second conductivity type third region on said first layer between said first gate electrode and said second gate electrode;
• forming a first insulator film between said first gate electrode and said third region;
• and
• forming a second insulator film between said second gate electrode and said third region,
• writing data by injecting hot carriers into said second gate electrode from said first gate electrode through said first insulator film, said third region and said second insulator film.

A method of operating a semiconductor memory comprising:

• forming a second conductivity type first region and a second conductivity type second region on a first layer consisting of a first conductivity type semiconductor;
• forming a first gate electrode on said first layer;
• forming a second gate electrode on said first layer between said first region and said second region through a gate insulator film with respect to said first layer;
• forming a second conductivity type third region between either said first gate electrode or said second region on said first layer gate electrode;
• forming a first insulator film on one surface of said third region;
• and
• forming a second insulator film on another surface of said third region,
• writing data by injecting hot carriers from either said first gate electrode or said second region into said second gate electrode through said first insulator film, said third region and said second insulator film.