Semiconductor memory device having faulty cells
AssigneeHitachi, Ltd.
InventorsKunihiro Katayama, Takayuki Tamura, Satoshi Watatani, Kiyoshi Inoue, Shigemasa Shiota, Masashi Naito
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi, Ltd.
InventorsKunihiro Katayama, Takayuki Tamura, Satoshi Watatani, Kiyoshi Inoue, Shigemasa Shiota, Masashi Naito
Estimating the term…
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.
A storage device comprising:
A storage device comprising:
A storage device comprising:
Dependencies are inferred from the claim text.