Quantum magnetic memory
AssigneeIntel Corporation
InventorsEric C. Hannah, Michael Brown
Life of this patent
Estimating the term…
Abstract
A system for storing data on a magnetic medium using spin polarized electron beams is provided. The system includes a source of spin polarized electrons and a storage medium disposed a selected distance from the source. The storage medium has a plurality of storage locations, each of which includes a layer of magnetic material sandwiched between first and second layers of a half-metallic material. The resulting sandwich structure forms a spin dependent electron trap that increases coupling between beam electrons in a first spin state and target electrons in a second spin state. An electron optics system directs the source of spin polarized electrons to one of the plurality of storage locations.
Claims22
A system for storing data comprising:
- a source of spin-polarized electrons;
- and
- a medium, disposed a first distance from the source to interact with the spin-polarized electrons, the medium including a layer of magnetic material sandwiched between first and second layers of spin mirror materials to form a spin-dependent electron trap.
A method for switching a magnetic domain from a first spin state to a second spin state, the method comprising:
- directing at the magnetic domain a beam of electrons polarized in the second spin state;
- and
- trapping a portion of the beam in the magnetic domain between first and second layers of a spin mirror material.
A storage structure comprising an array of magnetic bits, each magnetic bit comprising a hard magnetic material in a first magnetic state sandwiched between first and second layers of a spin-mirror material, the first and second layers of spin mirror material being polarized in the first magnetic state.
A system for storing data comprising:
- a source of spin polarized electrons;
- a storage medium disposed a selected distance from the source and having a plurality of storage locations, each storage location including a magnetic material sandwiched between first and second spin-mirror materials to preferentially trap electrons of a given spin state near the magnetic material;
- and
- electron optics to direct the spin polarized electrons to one of the plurality of storage locations.
Dependencies are inferred from the claim text.