Optical method of measuring trench depth
AssigneeUnited Microelectronics Corp.
InventorsJau-Hwang Ho, Osbert Cheng
Life of this patent
Estimating the term…
Loading patent…
AssigneeUnited Microelectronics Corp.
InventorsJau-Hwang Ho, Osbert Cheng
Estimating the term…
An optical method for measuring a trench depth, applicable to a substrate having a trench therein, wherein the substrate has a first surface, and the trench has a bottom surface to serve as a second surface as well as a depth. The method involves measuring a total reflectance from the substrate using different wavelengths, wherein the total reflectance is determined by a first actual reflectance from the first surface, a second actual reflectance from the second surface, and a scattering factor. The second actual reflectance is then determined from the measurement of the first actual reflectance from the first surface and the calculation result of the scattering factor. Since a trench depth is determined from the second actual reflectance, the trench depth is calculated after acquiring the second actual reflectance.
An optical method for measuring a silicon trench depth, applicable to a substrate having a trench therein, wherein the substrate has a first surface, and the trench has a bottom surface to serve as a second surface as well as a depth, the method comprising steps of:
A method for measuring a trench depth using optics, applicable to a substrate having a trench therein, wherein the substrate has a first surface, and the trench has a bottom surface to serve as a second surface as well as a depth, the method comprising steps of:
Dependencies are inferred from the claim text.