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US 6,388,624 B1Granted
Parallel-planar plasma processing apparatus
AssigneeHitachi, Ltd.
InventorsHideyuki Kazumi, Hironobu Kawahara
Life of this patent
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Abstract
In a method of generating plasma by using a high frequency in VHF or UHF band and a magnetic field, a plasma processing apparatus has an antenna and an emitting port which are adapted to supply the high frequency in UHF or VHF band to a processing chamber and a magnetic field forming unit for forming a magnetic field in the processing chamber, wherein the ratio between the radius of the antenna and the effective length of the emitting port is 0.4 or more and 1.5 or less, whereby plasma of high density and high uniformity can be generated in a wide parameter region.
Claims8
A plasma processing apparatus comprising:
- a vacuum vessel;
- a processing chamber arranged in the vacuum vessel and supplied with gas;
- a support electrode arranged in the processing chamber to support an object to be processed;
- an antenna having an emitting port, the antenna and the emitting port being adapted to supply a high frequency in a UHF band or a VHF band to the processing chamber;
- and
- magnetic field forming means for forming a magnetic field in the processing chamber;
- wherein a ratio between a radius of the antenna and an effective length d* of the emitting port is 0.4 or more and 1.5 or less, the effective length d* being defined by d*=(f/f0)d/∈r½, where f is the high frequency in the UHF band or the VHF band, f0 is a reference frequency of f0=450 MHz, d is a real dimension of the emitting port, and ∈r is a relative dielectric constant of an insulating material constituting the emitting port.
4 more elements
Dependencies are inferred from the claim text.