MOSFET mixer for low supply voltage
AssigneeProminenet Communications, Inc.
InventorHwey-Ching Chien
Life of this patent
Estimating the term…
Abstract
A MOSFET operating as a mixer has its drain biased at the knee of the ID vs VDS characteristic. A local oscillator voltage is applied to the gate and a RF signal voltage is applied to the drain through a singled-ended source follower. The nonlinear curvature at the knee produces a beat frequency current. This mixer requires less supply voltage, and results in more conversion gain and less feed-through of the RF input signal than the Gilbert multiplier. Conversely, the RF voltage can be applied to the gate and the local oscillator voltage can be applied to the drain.
Claims3
A mixer circuit using MOS field effect transistors (MOSFET) having a threshold voltage Vth, a drain characteristic with an ohmic region where the drain current ID increases with increasing drain-to-source voltage VDS, and current saturation region where the drain current is constant with increasing VDS for a fixed gate-to-source voltage, comprising:
- a first MOSFET having a first source, a first gate and a first drain;
- a ground supply voltage applied to said first source;
- a first dc quiescent gate voltage applied to said first gate;
- a first radio frequency (RF) voltage V1 superimposed on said first dc quiescent gate voltage,
- a second MOSFET operating as a single ended source follower, having a drain connected to a dc power supply, a source dc-connected to said first drain of said first MOSFET, and a gate:
- applied with a dc gate voltage such that the dc drain-to-source voltage of the said first MOSFET is equal to a transition (knee) voltage Vknee between said ohmic region and said current saturation region below said current saturation region of the drain characteristic of the said first MOSFET, and superimposed with a second RF voltage V2;
- and
- a means to sense the drain current of said second MOSFET having a frequency component equal the beat frequency of said V1 and said V2,
- wherein the first MOSFET and the second MOSFET are of equal size, the dc drain voltage of the second MOSFET is at least one threshold voltage less than the dc gate voltage, and the dc gate voltage of said second MOSFET is equal to twice the dc gate-to-source of said first MOSFET minus the threshold voltage (Vt) of said second MOSFET so that the dc drain-to-source voltage of said first MOSFET is automatically biased to the Vknee.
Dependencies are inferred from the claim text.