Plasma processing apparatus and method

A plasma processing apparatus comprising:

• a vacuum chamber, a part or all of which forms a plasma generating space and is made of non-conductive material;
• a gas supplying unit which supplies a process gas into the vacuum chamber;
• an exhaust unit which evacuates the vacuum chamber;
• a coil-shaped inductive coupling antenna and a plate-shaped electrostatic capacitive coupling antenna which are electrically connected in series disposed over the part or all of the vacuum chamber made of non-conductive material to generate an electric field in the plasma generating area;
• a first high-frequency power source which supplies a high-frequency electric field to the inductive coupling antenna and the electrostatic capacitive coupling antenna which are connected in series;
• an impedance matching unit which matches impedances of the inductive coupling antenna and the electrostatic capacitive coupling antenna with an output impedance of the first high-frequency power source;
• an electrode on which a specimen to be processed is placed in the vacuum chamber;
• and
• a second high-frequency power source which supplies a high-frequency electric field to the electrode.

A plasma processing apparatus comprising:

• an inductive coupling antenna for a surface enclosing a plasma forming area;
• and
• an electrostatic capacitive coupling antenna for a surface which is not equipped with the inductive coupling antenna;
• wherein the inductive coupling antenna and the electrostatic capacitive coupling antenna are electrically connected in series;
• and
• wherein the plasma processing apparatus further comprises current controlling means for controlling a ratio of a high-frequency current which flows through the electrostatic capacitive coupling antenna and the inductive coupling antenna.

A plasma processing apparatus comprising:

• an inductive coupling antenna for a surface enclosing a plasma forming area;
• and
• an electrostatic capacitive coupling antenna for a surface which is not equipped with the inductive coupling antenna;
• wherein the inductive coupling antenna and the electrostatic capacitive coupling antenna are electrically connected in series;
• and
• wherein the plasma processing apparatus further comprises a circuit for controlling a ratio of a high-frequency current which flows through the electrostatic capacitive coupling antenna.

A plasma processing apparatus comprising:

• an inductive coupling antenna for a surface enclosing a plasma forming area;
• and
• an electrostatic capacitive coupling antenna for a surface which is not equipped with the inductive coupling antenna;
• wherein the inductive coupling antenna and the electrostatic capacitive coupling antenna are electrically connected in series;
• and
• wherein the plasma processing apparatus further comprises a circuit for controlling a high-frequency current which flows through the inductive coupling antenna.

A plasma processing method comprising the steps of:

• controlling a ratio of a high-frequency current flowing through an inductive coupling antenna and an electrostatic capacitive coupling antenna which are electrically connected in series;
• generating plasma in a vacuum chamber with an electric field produced by the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• and
• using the plasma to process a specimen.

A plasma processing method comprising the steps of:

• electrically connecting a coil-shaped inductive coupling antenna and a plate-shaped electrostatic capacitive coupling antenna in series to generate an electric field in a plasma generating area in a vacuum chamber;
• supplying high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna after matching impedances of the inductive coupling antenna and the electrostatic capacitive coupling antenna with an output impedance of a high-frequency power source;
• generating plasma in the plasma generating area in the vacuum chamber;
• applying a bias voltage to attract plasma ions to a specimen placed in the vacuum chamber;
• and
• processing the specimen with plasma.

A plasma processing method comprising the steps of:

• generating respective electric fields in a chamber with an inductive coupling antenna and an electrostatic capacitive coupling antenna which are electrically connected in series such that the electric field generated in an area in the chamber in which the electric field generated by the inductive coupling antenna is weak;
• causing electric fields generated by the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate plasma in the chamber;
• and
• using the plasma to process a specimen in the chamber.

A plasma cleaning method comprising the steps of:

• controlling a ratio of a high-frequency current which flows through an inductive coupling antenna and an electrostatic capacitive coupling antenna which are electrically connected in series;
• causing respective electric fields generated by the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate plasma in a chamber;
• and
• using the plasma to clean an inside of the chamber.

A plasma processing apparatus comprising:

• a vacuum chamber including a discharging section, the discharging section being made of an insulating material, a plasma being generated in the discharging section;
• an inductive coupling antenna disposed outside the discharging section opposite one surface of the discharging section;
• an electrostatic capacitive coupling antenna disposed outside the discharging section and covering an entirety of the discharging section;
• and
• a high-frequency power source which supplies high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• wherein a portion of the electrostatic capacitive coupling antenna which covers the one surface of the discharging section is disposed between the one surface of the discharging section and the inductive coupling antenna and has at least one opening therein through which an electric field from the inductive coupling antenna passes;
• and
• wherein the electrostatic capacitive coupling antenna and the inductive coupling antenna are electrically connected in series with the high-frequency power source.

A plasma processing apparatus comprising:

• a vacuum chamber including a discharging section, the discharging section being made of an insulating material, a plasma being generated in the discharging section;
• an inductive coupling antenna disposed outside the discharging section opposite one surface of the discharging section;
• an electrostatic capacitive coupling antenna disposed outside the discharging section and covering an entirety of the discharging section;
• and
• a high-frequency power source which supplies high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• wherein the inductive coupling antenna is disposed between the one surface of the discharging section and a portion of the electrostatic capacitive coupling antenna which covers the one surface of the discharging section;
• and
• wherein the electrostatic capacitive coupling antenna and the inductive coupling antenna are electrically connected in series with the high-frequency power source.

A plasma processing apparatus comprising:

• a vacuum chamber, at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material;
• a gas supplying unit which supplies a process gas into the vacuum chamber;
• an exhaust unit which evacuates the vacuum chamber;
• a coil-shaped inductive coupling antenna disposed outside the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material;
• a plate-shaped electrostatic capacitive coupling antenna disposed outside the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material, the inductive coupling antenna and the electrostatic capacitive coupling antenna being electrically connected in series;
• a first high-frequency power source which supplies high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series, thereby causing the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate respective electric fields in the plasma generating space;
• an impedance matching unit which matches an impedance of the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series with an output impedance of the first high-frequency power source;
• a load circuit connected in parallel with the electrostatic capacitive coupling antenna which controls a high-frequency current flowing through the electrostatic capacitive coupling antenna, the load circuit having a small actual resistance and a variable reactance;
• an electrode disposed in the vacuum chamber, an object to be processed being placed on the electrode;
• and
• a second high-frequency power source which supplies high-frequency power to the electrode.

A plasma processing method comprising the steps of:

• placing an object to be processed in a vacuum chamber;
• constructing a coil-shaped inductive coupling antenna having at least two inductive coupling antenna circuits;
• electrically connecting the inductive coupling antenna and a plate-shaped electrostatic capacitive coupling antenna in series;
• matching an impedance of the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series with an output impedance of a high-frequency power source;
• supplying high-frequency power from the high-frequency power source to the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series, thereby causing the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate respective electric fields in a plasma generating space in there vacuum chamber;
• generating a plasma in the plasma generating space;
• changing a ratio of a high-frequency current which flows through the electrostatic capacitive coupling antenna to change a distribution of a portion of the plasma generated b y the electric field generated by the electrostatic capacitive coupling antenna without changing a distribution of a portion of the plasma generated by the electric field generated by the inductive coupling antenna;
• changing a ratio of high-frequency currents which flow through the inductive coupling antenna circuits to change the distribution of the portion of the plasma generated by the electric field generated by the inductive coupling antenna without changing the distribution of the portion of the plasma generated by the electric field generated by the electrostatic capacitive coupling antenna;
• applying a bias voltage to the object to be processed to attract ions in the plasma towards the object to be processed;
• and
• processing the object to be processed with the plasma.

A plasma processing method comprising the steps of:

• placing an object to be processed in a vacuum chamber;
• providing a coil-shaped inductive coupling antenna including at least two inductive coupling antenna circuits;
• electrically connecting the inductive coupling antenna and a plate-shaped electrostatic capacitive coupling antena in series;
• matching an impedance of the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series with an output impedance of a high-frequency power source;
• supplying high-frequency power from the high-frequency power source to the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series, thereby causing the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate respective electric fields in a plasma generating space in the vacuum chamber;
• generating a plasma in the plasma generating space;
• applying a bias voltage to the object to be processed to attract ions in the plasma toward the object to be processed;
• and
• processing the object to be processed with the plasma;
• wherein continuous plasma processing according to different process recipes is performed by repeating the steps of:
• controlling respective high-frequency currents which flow through the inductive coupling antenna circuits;
• and
• executing a process according to one of the process recipes using the currents set in the current controlling step.

A plasma processing method comprising the steps of:

• generating respective electric fields in a chamber with an inductive coupling antenna and an electrostatic capacitive coupling antenna which are electrically connected in series such that the electric field generated by the electrostatic capacitive coupling antenna is generated in an area in the chamber where the electric field generated by the inductive coupling antenna is weak;
• preventing an electrostatic capacitive coupling electric field which is generated by the inductive coupling antenna from propagating into the chamber with the electrostatic capacitive coupling antenna;
• generating a plasma in the chamber using the electric fields generated by the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• and
• processing an object with the plasma.

A plasma cleaning method comprising the steps of:

• providing an electrostatic capacitive coupling antenna which covers an entirety of a discharging section of a chamber, the discharging section being made of an insulating material;
• providing an inductive coupling antenna opposite one part the discharging section;
• electrically connecting the inductive coupling antenna and the electrostatic capacitive coupling antenna in series;
• controlling a ratio of respective high-frequency currents which flow through the inductive coupling antenna and the electrostatic capacitive coupling antenna which are electrically connected in series;
• generating a plasma in the chamber using the electric fields generated by the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• and
• using the plasma to clean an inside of the chamber.

A plasma processing apparatus comprising:

• a vacuum chamber including a discharging section, the discharging section being made of an insulating material, a plasma being generated in the discharging section;
• an inductive coupling antenna disposed outside the discharging section opposite one surface of the discharging section;
• an electrostatic capacitive coupling antenna disposed outside the discharging section and covering an entirety of the discharging section;
• and
• a high-frequency power source which supplies high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna;
• wherein the electrostatic capacitive coupling antenna and the inductive coupling antenna are electrically connected in series with the high-frequency power source.

A plasma processing apparatus comprising:

• a vacuum chamber, at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material;
• a gas supplying unit which supplies a process gas into the vacuum chamber;
• an exhaust unit which evacuates the vacuum chamber;
• a coil-shaped inductive coupling antenna disposed outside the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material, the inductive coupling antenna being disposed opposite one surface of the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material;
• a plate-shaped electrostatic capacitive coupling antenna disposed outside the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material, the electrostatic capacitive coupling antenna covering an entirety of the at least a portion of the vacuum chamber forming a plasma generating space and being made of a non-conductive material, the inductive coupling antenna and the electrostatic capacitive coupling antenna being electrically connected in series;
• a first high-frequency power source which supplies high-frequency power to the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series, thereby causing the inductive coupling antenna and the electrostatic capacitive coupling antenna to generate respective electric fields in the plasma generating space;
• an impedance matching unit which matches an impedance of the inductive coupling antenna and the electrostatic capacitive coupling antenna connected in series with an output impedance of the first high-frequency power source;
• an electrode disposed in the vacuum chamber, an object to be processed being placed on the electrode;
• and
• a second high-frequency power source which supplies high-frequency power to the electrode.