Electron emission device with electron supply layer having reduced resistance

An electron emission device comprising:

• an electron-supply layer made of semiconductor;
• an insulator layer formed on the electron-supply layer;
• and
• a thin-film metal electrode formed on the insulator layer,
• wherein said electron-supply layer is essentially composed of elements belonging to group IV and has an additive of at least one material selected from atomic elements belonging to group III or V,
• wherein said insulator layer is made of dielectric and has a film thickness of 50 nm or greater.

An electron emission display device comprising:

• a pair of a first substrate and an optically transparent second substrate opposing to each other with a vacuum space interposed therebetween;
• a plurality of electron emission devices formed on said first substrate, each of which including an electron-supply layer made of semiconductor formed on ohmic electrodes formed on said first substrate, an insulator layer formed on said electron-supply layer, and a thin-film metal electrode formed on said insulator layer and facing the vacuum space, wherein said electron-supply layer is essentially composed of elements belonging to group IV and has an additive of at least one material selected from atomic elements belonging to group III or V;
• a collector electrode formed on said second substrate;
• and
• a fluorescent material layer formed on said collector electrode and facing the vacuum space,
• wherein said additive is included at a ratio ranging from 0.1 to 10% atm % in the electron-supply layer.

An electron emission display device comprising:

• a pair of a first substrate and an optically transparent second substrate opposing to each other with a vacuum space interposed therebetween;
• a plurality of electron emission devices formed on said first substrate, each of which including an electron-supply layer made of semiconductor formed on ohmic electrodes formed on said first substrate, an insulator layer formed on said electron-supply layer, and a thin-film metal electrode formed on said insulator layer and facing the vacuum space, wherein said electron-supply layer is essentially composed of elements belonging to group IV and has an additive of at least one material selected from atomic elements belonging to group III or V;
• a collector electrode formed on said second substrate;
• and
• a fluorescent material layer formed on said collector electrode and facing the vacuum space,
• wherein said insulator layer is made of dielectric and has a film thickness of 50 nm or greater.