Surface acoustic wave device and process for manufacturing the same
AssigneesFujitsu Limited, Fujitsu Media Devices Limited
InventorsTokihiro Nishihara, Osamu Ikata, Yoshio Satoh
Life of this patent
Estimating the term…
Abstract
A surface acoustic wave device includes a substrate at least a surface of which has a piezoelectric function, and an electrode formed on the substrate, wherein the electrode is composed of a first film of Al containing Cu at or over a solid solubility limit of Cu to Al and one or more unit(s) of a second film of Al containing Mg at or over a Solid solubility limit of Mg to Al and a third film of Al containing Cu at or over the solid solubility limit of Cu to Al formed on the first film in this order, and the first film and the third film contain Mg diffused from the second film.
Claims5
A surface acoustic wave device comprising:
- a substrate at least a surface of which has a piezoelectric function, and
- an electrode formed on the substrate,
- wherein the electrode is composed of a first film of Al containing Cu at or over a solid solubility limit of Cu to Al and one or more unit(s) of a second film of Al containing Mg at or over a solid solubility limit of Mg to Al and a third film of Al containing Cu at or over the solid solubility limit of Cu to Al formed on the second film in this order, and the first film and the third film contain Mg diffused from the second film.
Dependencies are inferred from the claim text.