Post-processing a completed semiconductor device
AssigneeInternational Business Machines Corporation
InventorsJames George Michael, Jeffrey Scott Miller, Gary Dale Pittman, Rosemary Ann Previti-Kelly
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Abstract
A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer and exposed bond pads of the semiconductor device, and thereafter performing post-processing of the completed semiconductor device. Post-process structures, such as charge-coupled devices, can be formed above the protective film during this post-processing. Subsequent to the post-processing, the protective film is selectively etched to again expose the bond pads.
Claims11
A semiconductor device assembly comprising:
- a semiconductor device with at least one metal level, a final passivation layer protecting the at least one metal level and bond pads exposed through the final passivation layer for accessing the semiconductor device via the at least one metal level;
- a protective film over the final passivation layer, said protective film having openings aligned with said exposed bond pads of said semiconductor device to allow access thereto;
- and
- a post-process electronic structure disposed above said protective film and formed above said protective film subsequent to completion of formation of said semiconductor device with said at least one metal level, final passivation layer and exposed bond pads.
Dependencies are inferred from the claim text.