System and method for circuit rebuilding via backside access
AssigneeAdvanced Micro Devices, Inc.
InventorJeffrey D. Birdsley
Life of this patent
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Abstract
A circuit modification tool and method for a flip-chip IC permits access to circuit regions near the interconnects using an aperture formed through the circuit side. In one embodiment, an etching tool is adapted to remove substrate from the backside of the semiconductor devices and to form a via into the circuit side and beyond a first region in the circuitry. A depth indicating the location of the first region is determined, and a focused ion-beam generator is used to modify a second region in the circuit side using the via for access. After the modification, the first region is rebuilt using the via for access.
Claims20
An apparatus for circuit-modification of a flip-chip semiconductor device having a backside and an opposite circuit side that includes a first region, comprising:
- means for removing substrate from the backside of the semiconductor devices;
- means for determining a depth indicating the location of the first region;
- means for forming a via into the circuit side and beyond the first region;
- means for modifying a second region in the circuit side using the via for access;
- and
- means for rebuilding the first region using the via for access.
An apparatus for circuit-modification of a flip-chip semiconductor device having a backside and an opposite circuit side that includes a first region, comprising:
- an etching tool adapted to remove substrate from the backside of the semiconductor devices and to form a via into the circuit side and beyond the first region;
- means for determining a depth indicating the location of the first region;
- beam-generation means including a focused ion-beam generator adapted to reconstruct a second region in the circuit side using the via for access;
- and
- means for rebuilding the first region using the via for access.
A method of circuit-modification of a flip-chip semiconductor device having a backside and an opposite circuit side that includes a first region, comprising:
- removing substrate from the backside of the semiconductor devices;
- determining a depth indicating the location of the first region;
- forming a via into the circuit side and beyond the first region;
- modifying a second region in the circuit side using the via for access;
- and
- rebuilding the first region using the via for access.
Dependencies are inferred from the claim text.