Three commonly housed diverse semiconductor dice

A semiconductor device, comprising:

• first and second MOSFET dice, each having opposing surfaces which contain respective drain, source and gate electrodes;
• a Schottky diode die having opposing surfaces which contain respective anode and cathode electrodes;
• a conductive lead frame including first and second separate die pad areas, the first MOSFET die and the Schottky diode die being disposed on the first die pad such that the drain and cathode electrodes thereof are electrically coupled to the first die pad, and the second MOSFET die being disposed on the second die pad such that its drain electrode is electrically coupled thereto;
• a first plurality of pins being integral with and extending from one edge of the first die pad;
• a second plurality of pins being integral with and extending from one edge of the second die pad;
• a third plurality of pins being separated from one another and from the first and second die pads;
• a first plurality of bonding wires connecting the source electrode the first MOSFET die to at least one of the third plurality of pins;
• a second plurality of bonding wires connecting the source electrode of the second MOSFET die to at least another one of the third plurality of pins;
• and
• a housing for encapsulating the lead frame, MOSFET and Schottky diode dice, and bonding wires, the first, second and third pluralities of pins extending beyond a periphery of the housing for external connection.