Silicon-based thin-film photoelectric device

A silicon-based thin film photoelectric conversion device comprising a substrate, a back electrode having a light reflecting metal film, at least one silicon-based photoelectric conversion unit and a front transparent electrode, wherein at least one of said light reflecting metal film and said front transparent electrode has that surface thereof closer to said silicon-based photoelectric conversion unit provided with convexities and concavities having a level difference therebetween in a range of 0.01 to 2 μm and a pitch larger than said level difference and no more than 25 times said level difference, and the transparent electrode or back electrode, further from the substrate, has a smaller unevenness pitch as compared to the back electrode or transparent electrode, nearer to the substrate;

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• wherein at least one said photo electric conversion unit includes a first conductivity type layer, a crystalline silicon-based photoelectric conversion layer, and an opposite conductivity type layer;
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• wherein said crystalline silicon-based photoelectric conversion layer is formed, with a substrate temperature of no more than 400° C., and said crystalline silicon-based photoelectric conversion layer has a crystallized volume fraction of at least 80%, a hydrogen content in a range of 1 to 30 atomic %, a thickness in a range of 0.5 to 20 μm, a preferential crystal orientation plane of (110) parallel to a film surface thereof, and an x-ray diffraction intensity ratio of no more than 0.2 as a (111) diffraction peak to (220) diffraction peak ratio.